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Ntt Photonics Lab. Atsugi‐shi Jpn | 論文
- Current and Wavelength Characteristics of Polarization-Insensitive SOAs with Strained-Bulk Active Layers
- Wavelength Insensitive Tunable Wavelength Conversion Using Cascaded Semiconductor Lasers(Special Issue on High-Capacity WDM/TDM Networks)
- Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- InP-Based Monolithic Optical Frequency Discriminator Module for WDM Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- InP-Based Monolithic Optical Frequency Discriminator Module for WDM Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Polarization Independent Semiconductor Arrayed Waveguide Gratings Using a Deep-Ridge Waveguide Structure(Special Issue on High-Capacity WDM/TDM Networks)
- High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Spectral Linewidth and Linewidth Enhancement Factor in 1.5-μm Modulation-Doped Strained Multiple-Quantum-Well Lasers
- Multiple-Phase-Shift Super Structure Grating DBR Lasers
- Electrical Drift Phenomenon due to Deep Donor Defects Induced by Reactive Ion Etching (RIE) Using Mixtur of Ethane (C_2H_6) and Hydrogen (H_2)
- DLTS Measurement on Electron-Irradiated GaAs-on-Si
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices