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Nippon Sanso Corp. Ibaraki Jpn | 論文
- Enhanced-Nitridation of Silicon by UV-Irradiation
- Oxidation-Retarded Diffusion of Bismuth in Silicon
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Reduction of Fringe Noise in Wavelength Modulation Spectroscopy Using a One-Dimensional Focal Plane Array
- Efficient Reduction of Fringe Noise in Trace Gas Detection with Diode laser Multipass Absorption Spectroscopy
- Absorption Spectrometry of Trace Moisture in Ammonia Gas with a 1371 nm Distributed-Feedback Diode Laser
- Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
- Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition
- Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface