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Nec Corp. Ibaraki Jpn | 論文
- Solution-Phase Automated Synthesis of Tripeptide Derivatives
- Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
- 14pXC-12 GaN/Sapphire 界面の表面波 ATR(励起子・ポラリトン, 領域 5)
- 27pXS-10 GaN/Sapphireのヘテロ残留線反射(低次元物質)(領域5)
- 27pXS-9 GaN/Sapphireの表面波ATR(低次元物質)(領域5)
- Pressure dependence of charge distribution along TCNQ columns in Cs2TCNQ3
- D-4 Manufacturing Technology of High Resolution Probes for NDT
- Enhancement of Ultrasonic Testing Equipment Time Based Resolution by Synthetic Waveform Generator : Ultrasonic Microscopy and Nondestructive Testing
- Direct Measurement of Sheath Electric Field Distribution in Front of Substrate in Electron Cyclotron Resonance Plasma by Laser-Induced Fluorescence Technique
- Two-Dimensional Measurement of He Metastable Atom Density Profile in Front of Substrate in Electron Cyclotron Resonance Plasma Flow by Laser-Induced Fluorescence Spectroscopy
- Modification of electronic structure of Cs2TCNQ3 with magnetic field
- Recent Transport Studies of High Temperature Superconductors at ISSP : II-D Transport Properties : II Oxide Superconductors; Experiments II : Electronic States
- High-Field Magneto-Luminescence in Cd_Mn_Se under High Pressures at 4.2 K
- Appearance of a Maximum of T_c and a Large Negative dT_c/dP in the Superconducting Tl-Ba-Ca-Cu-O Compounds under Pressure
- High-Field Magnetic Torque Measurement in the Spin Gap System (CH_3)_2CHNH_3CuCl_3(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Cu-NMR Study on Field-Induced Phase Transitions in Quantum Spin Magnet NH_4CuCl_3(Magnetization Plateaus, Field-Induced Phase Transitions and Dynamics in Quantum Spin Systems)
- The Two-Phase Coexistent Region in Nd_Sr_MnO_3
- The Two-Phase Coexistent Region in Nd_Sr_MnO_3
- Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
- Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates