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National Space Dev. Agency Of Japan Ibaraki Jpn | 論文
- Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
- Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
- Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
- Photoluminescence Study of Electron-Beam-Induced Damage in GaAs/AlGaAs Quantum-Well Structures
- Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
- DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
- Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
- Optically Pumped Stimulated Emission from CuGa(S_Se_)_2/CuAl_Ga_(S_Se_)_2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy
- Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAl_xGa_(S_ySe_)_2
- Metalorganic Vapor Phase Epitaxy of CuAl_xGa_(S_ySe_)_2