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National Institute of Information and Communications Technology | 論文
- 1P254 Conformations and chemical states of F_1-ATPase during rotation(9. Molecular motor (I),Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Generation Method of a Calculable Electromagnetic Pulse and its Evaluation
- Influences of Air Fluctuation and Environmental Vibration on Magnetic Noise in a Magnetically-Shielded Room
- 放射電磁波を介して漏洩する情報量に関する考察
- Simultaneous Tunable Wavelength Conversion and Power Amplification Using a Pump-Modulated Wide-Band Fiber Optical Parametric Amplifier
- All-optical phase-multiplexing by FWM-based all-optical phase interleaving in a bismuth-oxide highly-nonlinear fiber (光エレクトロニクス)
- All-optical phase-multiplexing by FWM-based all-optical phase interleaving in a bismuth-oxide highly-nonlinear fiber (光通信システム)
- All-optical Phase-Multiplexing by FWM-based All-Optical Phase Interleaving in a Bismuth-Oxide Highly-Nonlinear Fiber
- All-Optical Phase Multiplexing from π/2-Shifted DPSK-WDM to DQPSK Using Four-Wave Mixing in Highly-Nonlinear Fiber
- All-optical generation of DQPSK from DPSK-WDM using four-wave mixing in highly-nonlinear fiber (フォトニックネットワーク)
- 1-km free-space quantum key distribution experiments between portable optical terminals for space communications(WSANE 2009 (Workshop for Space, Aeronautical and Navigational Electronics))
- Nanophotonic Matching by Optical Near-Fields between Shape-Engineered Nanostructures
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
- DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
- BS-9-1 Optical Ring GRID in GMPLS Based Networks(BS-9. Latest Trends on Information Networking Technologies)
- Soil freezing and deformation process in winter on the convex slope at the foot of volcano in central Japan(Abstracts of Papers Presented at the Meeting of the Union in June 2006 at Mongolia)