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Nanomaterials Microdevices Research Center, Osaka Institute of Technology | 論文
- Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- Molecular Beam Epitaxial Growth and Characterization of the Vertically Aligned InAs Quantum Dots Embedded in Al_Ga_As
- Self-Assembling Molecular Beam Epitaxial Growth of the InAs Quantum Dots Embedded in Deep Al_Ga_As Barriers
- Actively Mode-Locked and Q-Switched Phosphate Glass Oscillator
- Actively Mode-Locked and Q-Switched YAG Laser with Precise Synchronizability
- Molecular Beam Epitaxy of In_xGa_Sb (0≦x≦1)
- Performance and Stability of ZnO/ZnMgO Hetero-MIS FETs
- Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor
- Performance and Stability of ZnO/ZnMgO Hetero-Metal–Insulator–Semiconductor Field-Effect Transistors
- Ion-Sensitive Characteristics of an Electrolyte-Solution-Gate ZnO/ZnMgO Heterojunction Field-Effect Transistor as a Biosensing Transducer