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Nanoelectronics Research Institiute Aist | 論文
- TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature
- Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Investigation of Accumulation-mode Vertical Double-gate MOSFET
- Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)
- Work function control of Al-Ni alloy for metal gate application
- Charging Damage of SOI Wafer Diagnosed by Scanning Maxwell-Stress Microscopy
- 43.1: Invited Paper : Active-Matrix Field-Emitter Arrays for the Next-Generation FEDs(2.主なFED関連発表内容)(Report on 1999 SID International Symposium)
- Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)