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Nano Device Research center, KIST | 論文
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- Effects of Light on a P-Channel InGaP/GaAs/InGaAs Double Heterojunction Pseudomorphic Modulation-Doped Field Effect Transistor
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes