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Nano Device Research Center Kist | 論文
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 μm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Characteristics of Superluminescent Diodes Utilizing In0.5Ga0.5As Quantum Dots