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NTT Opto-Electronics Laboratories | 論文
- The Amplification Properties of a Highly Er^-Doped Phosphate Fiber
- Study on the Nature of Extrinsic Scattering Centers in Fluoride Glass Optical Fibers
- Fabrication of Low OH and Low Loss Fluoride Optical Fiber
- Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
- Persistent Spectral Hole-Burning in Semi-Crystalline Matrices Doped with Tetraphenylporphine
- Fast and Efficient Photon-Gated Burning of Persistent Spectral Holes in Donor-Acceptor Electron Transfer Systems
- Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings : FUTURE TECHNOLOGY
- Properties of In_Al_AS and In_Ga_AS/In_Al_AS Quantum Well Structures Grown on (111)B InP Substrates by Molecular Beam Epitaxy
- Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
- Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
- Spectral Linewidth and Linewidth Enhancement Factor in 1.5-μm Modulation-Doped Strained Multiple-Quantum-Well Lasers
- Multiple-Phase-Shift Super Structure Grating DBR Lasers
- Electrical Evaluation of Dry Etching Damage on the Side Wall of Mesa Structure
- Electrical Drift Phenomenon due to Deep Donor Defects Induced by Reactive Ion Etching (RIE) Using Mixtur of Ethane (C_2H_6) and Hydrogen (H_2)
- Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties
- 40-Gbit/s Ti:LiNbO_3 Optical Modulator with a Two-Stage Electrode(Special Issue on High-Capacity WDM/TDM Networks)
- Push-Pull Type Ridged Ti:LiNbO_3 Optical Modulator (Special Issue on Optomicrowave Techniques and Their Applications)
- Optical Properties of an InGaAlAs/InP Type-II Superlattice
- Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
- Electroabsorption in an AlInAs/InP Type II Superlattice