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NTT Opto-Electronics Laboratories | 論文
- MOVPE法によるGaAs/AlGaAs高抵抗プレ-ナ選択埋込み型GRIN-SCHレ-ザ
- Analysis of Totally Reflected Light from Liquid Crystal Cell using Renormalized Ellipsometry
- Monolithic Devices Integrated with Electroabsorption Modulators for Short Pulse Generation and Optical TDM
- Effect of Argon Atmosphere on Self-Absorption of a Spectral Line in Laser Microprobe Analysis
- First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
- The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Threading Dislocation Density Reduction in GaAs on Si Substrates : Surfaces, Interfaces and Films
- Efficient 1.5 μm to Visible Upconversion in Er^-Doped Halide Phosphors
- Effects of Ion Irradiation on the Critical Current Density of Ba_2YCu_3O_ Thin Films
- High-T_c Y-Ba-Cu-O Thin Films Prepared by Dual Magnetron Sputtering
- Synthesis of Y-Ba-Cu-O Thin Films on Sapphire Substrates by RF Magnetron Sputtering
- Praseodymium-Doped Fiber Amplifiers at 1.3 μm (Special Issue on Fiber Amplifiers and Their Applications to Lightwave Communications)
- 0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
- Pr^-Doped Superfluorescent Fluoride Fiber Laser
- A Defect-Induced Absorption Loss in ZrF_4-Based Fluoride Glasses
- New Process for Fluoride Glass Preform Fabrication Using Chemical Vapor Deposition
- Organometallic Chemical Vapor Deposition of ZrF_4-Based Fluoride Glasses
- Photoluminescence at 0.5 μm Wavelength in Fluoride Optical Fibers
- Reduction of Impurities in Fluoride Glass Optical Fiber