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NTT Basic Research Laboratories | 論文
- A Triple Quantum Dot in a Single Wall Carbon Nanotube
- Real-Time Observation of Fractional-Order X-ray Reflection Profiles of InP(001) During Step-Flow Growth
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Fluctuation of the Electrical Conductivity Associated with the Glass Transition of xKNO_3・(100-x)Sr(NO_3)_2 Glasses
- Selective Dry Etching to Reveal Compositional Imhomogeneity in Co-Cr Magnetic Films
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- A New Si Doping Source for GaAs Growth by Molecular Beam Epitaxy
- Oxidation of Ultrathin SiGe Layer on Si(001) : Evidence for Inward Movement of Ge
- Ideally Ordered Metal Hole Arrays with High Aspect Ratios Prepared from Anodic Porous Alumina
- Flexible Nanofabrication in Three-Dimensional Electron-Beam Lithography Enhanced by Suppression of Proximity Effect
- Three-Dimensional Resist-Coating Technique and Nanopatterning on a Cube Using Electron-Beam Lithography and Etching
- Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
- Eectron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Eectrons
- Multiple Gated InAs Dot Ensembles