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Mitsubishi Materials Silicon Co. Ltd. | 論文
- Crystal-Originated Singularities on Si Wafer Surface after SCl Cleaning
- Field Ion-Scanning Tunneling Microscope Equipped with Molecular Beam Epitaxy and Its Application to Study Semiconductor Surface Structure
- Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown Characteristics
- Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
- Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photocomductivity Decay Method
- Contactless Estimation of the Surface Recombination Velocity at High-Low Junction Surfaces Fabricated by the Ion-Implantation Technique