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Mitsubishi Electric Corp. Hyogo Jpn | 論文
- 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
- (01n)-Oriented BiSrCaCuO Thin Films Formed on CeO_2 Buffer Layers
- Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO_3 (110) Substrate Using a MgO Buffer Layer
- Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11n) and (001) Orientation
- Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO_3 (110) Surfaces
- Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection
- Microscopic Study on (11n)-Oriented BiSrCaCuO Films by Cross-Sectional Transmission Electron Microscopy
- BiSrCaCuO Thin Film Grown on SrTiO_3 Substrate with Off-Oriented (110) Surface
- Bi_2(Sr, Ca)_3Cu_2O_x and Bi_2(Sr, Ca)_4Cu_3O_x Thin Films with (11n) Orientation
- Ferroelectric Behavior in the Copolymer of Vinylidenefluoride and Trifluoroethylene
- Temperature Variation of Lattice Strain in Slightly Mismatched InGaP/GaAs LPE Layers (0
- Raman Spectral Behavior of In_Ga_xP (0
- Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates
- Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
- Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region
- Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
- LPE Growth of In_Ga_xAs_P_y with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
- Photoluminescence Processes of Zn-Doped In_Ga_xP with 0.6