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Mirai-selete (semiconductor Leading Edge Technologies Inc.) | 論文
- Improvement of Field Emission Characteristics by Fabricating Aligned Open-Edged Particle-Free Carbon Nanotubes : Semiconductors
- Metal Nanocrystals Grown by Vacuum Deposition on Aligned Carbon Nanotubes
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Electrical properties of carbon nanotubes grown at a low temperature by radical chemical vapor deposition for future LSI interconnects
- Carbon Nanotube Via Technologies for Advanced Interconnect Integration
- Chemical Modification of Multi-walled Carbon Nanotubes (MWNTs) By Vacuum Ultraviolet (VUV) Irradiation Dry Process
- Influence of Growth Mode of Carbon Nanotubes on Physical Properties for Multiwalled Carbon Nanotube Films Grown by Catalystic Chemical Vapor Deposition
- Carbon nanotube technologies for future ULSI via interconnects
- Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition
- High-Quality Carbon Nanotube Growth at Low Temperature by Pulse-Excited Remote Plasma Chemical Vapor Deposition
- High-Current Reliability of Carbon Nanotube Via Interconnects
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Electrical Properties of Carbon Nanotubes Grown at a Low Temperature for Use as Interconnects
- First-Principles Study of Electronic Properties in Si Lattice Matched SiGeC Alloy with a Low C Concentration