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Microwave Devices Team, ETRI | 論文
- Comparative Study of DC and Microwave Characteristics of 0.12μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process
- Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT
- A Comparative Study on the DC, Microwave Characteristics of 0.12μm Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Dielectric Assisted Process
- Broadband 60GHz Power Amplifier MMIC with Excellent Gain-Flatness
- 60GHz LAN Module Using Low Temperature Co-fired Ceramic Technology
- Investigation of Low-Frequency Noise Behavior of In_Al_As/In_Ga_As Metamorphic High Electron Mobility Transistors
- Low-frequency noise characteristics of In_Al_As/In_Ga_As metamorphic high electron mobility transistors
- Noise Performance of Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Wide Head T-Shaped Gate Recessed by Electron Cyclotron Resonance Plasma Etching
- Extremely Low Noise 0.15μm T-Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- Low Noise Characteristics of 0.2μm Al_Ga_As/In_Ga_As/GaAs Pseudomorphic HEMTs with Wide Head T-Shaped Multifinger Gate