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Microelectronics Research Center, SANYO Electric Co.,Ltd | 論文
- Development of a super low-noise GaAs FET amplifier for PHS
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
- Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
- Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
- New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
- A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers