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Matsushita Technoresearch, INC. | 論文
- Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
- Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
- Overview and the Future of Phase-Change Optical Disk Technology
- Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate
- Chemical State Depth Profile for GaAs Surface
- Auto-Doping Phenomena for the InGaAsP Active Layer in DH Structure Grown by LPE
- CH_4/N_2 Plasma Etching for Organic Low-k Dielectric Material