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Matsushita Research Institute Tokyo, Inc. | 論文
- Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas
- Nanometer-Sized Silicon Crystallites Prepared by Excimer Laser Ablation in Constant Pressure Inert Gas Ambient
- Ionic Conductivity in KCl and Its Dependence on Electrodes
- Simultaneous Fabrication of Vertical and 45° Mirrors of InP for Surface-Emitting Lasers Using Inclined Cl Ion Beams
- Tunnel Emission from Al-Al_2O_3-Metal Structures
- A Simulation Model for B-Mode Imaging : Photoacoustic Spectroscopy and Ultrasonic Imaging
- The UV Reflectivity Spectra of SrF_2 Single Crystals
- Line Shape Analysis of the Г-Exciton Spectra of NaCl, NaBr and NaI Single Crystals
- A cascade associative memory model with a hierarchical memory structure
- Associative Memory with a Sparse Encoding Mechanism for Storing Correlated Patterns
- Ferrimagnetic Resonance Linewidth of Ti-Substituted Ca-V Garnet
- Magnetic Properties of RXO_4 System
- Nuclear Magnetic Resonance Studies of Beryllium-Based Laves Phase XBe_2
- Gd- and Zr-Substituted Ca-V Garnets
- Spectral Reflectance of CoAl and NiAl Alloys with CsCl Structure
- Temperature Dependence of the Fundamental Spectra of Potassium-Halides in the Schumann Ultraviolet Region (4.4∼13.5 eV)
- Reflectivity Spectra of KBr and KI Single Crystals in Their Fundamental Region
- The Urbach Tails and Reflection Spectra of NaCl Single Crystals
- Frequency of Microwave Oscillation in GaAs p-n Junctions
- Surface Morphology of GaAs LPE Layers : Effects of Substrate Misorientation and Initial Supercooling