Surface Morphology of GaAs LPE Layers : Effects of Substrate Misorientation and Initial Supercooling
スポンサーリンク
概要
- 論文の詳細を見る
The surface morphology of GsAs LPE layers grown on substrates misoriented by 0.06°to 10°from the (100) plane is studied. In growth from equilibrated solution, two characteristic morphologies appear depending on the misorientation θ: terraces consisting of singular treads and risers when θ<1°, and ripples without singular faces when θ>1°. In growth from initially super-cooled solution, the terraces and ripples disappear, and smooth planar surfaces can be obtained even on misoriented substrates. The development of these morphologies is also studied at the initial growth stage.
- 社団法人応用物理学会の論文
- 1979-12-05
著者
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Mihara Minoru
Matsushita Research Institute Tokyo Inc.:(present Address) Tokyo Research Laboratory Matsushita Elec
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Toyoda Nobuyuki
Matsushita Research Institute Tokyo Inc.:(present Address) Tokyo Research Laboratory Matsushita Elec
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HARA Tohru
Matsushita Research Institute Tokyo, Inc.
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Hara Tohru
Matsushita Research Institute Tokyo Inc.:(present Address) Tokyo Research Laboratory Matsushita Elec
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Hara Tohru
Matsushita Research Institute Tokyo
関連論文
- Surface Morphology of GaAs LPE Layers : Effects of Substrate Misorientation and Initial Supercooling
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