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Matsushita Electronics Corp. Kyoto Jpn | 論文
- Study on Surface Acoustic Wave Characteristics of SiO_2/Interdigital-Transducer/ZnO/Diamond Structure and Fabrication of 2.5 GHz Narrow Band Filter
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- Crystallographic Orientations of Mg0 Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- NaCl-Type Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Equivalent Circuit Parameters of Surface-Acoustic-Wave Interdigital Transducers for ZnO/Diamond and SiO_2/ZnO/Diamond Structures
- Low-Loss Diamond Surface Acoustic Wave Devices Using Small-Grain Poly-Crystalline Diamond
- Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
- Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
- Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
- Thin Film Detection Employing Frequency Shift in Sheath Current Oscillation