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Matsushita Electric Industrial Co. Ltd. Kyoto Jpn | 論文
- Preparation and Properties of Superconducting [La_Ln_Ba_Sr_Ce_]_8Cu_6O_z (Ln=Eu, Gd, Dy, Ho and Y)
- Crystal Structure of New Oxide Superconductors, (Sm, Ba, Ce)_8Cu_6O_z, (Nd, Ba, Sr, Ce)_8Cu_6O_z, (La, Gd, Ba, Ce)_8Cu_6O_z and (La, Gd, Ba, Sr, Ce)_8Cu_6O_z
- Preparation and Superconducting Properties of [Ln, Ce, (Ba_Sr_x)]_8Cu_6O_z (Ln=Nd, Sm and Eu)
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Dynamical Calculation of Multi-Modal Nuclear Fission of Fermium Isotopes
- Fission Width of Compound Nuclei Calculated Using the Mean First Passage Time Method
- Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly (3-alkylthiophene) Films
- Fabrication and Characteristics of Schottky Gated Poly(3-alkylthiophene) Field Effect Transistors
- Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
- Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
- Ferromagnetic Resonance in [Co/Cu]-and[NiFeCo/Cu]-Multilayers
- Ferromagnetic Resonance in [NiFeCo/Cu/Co]-Multilayers
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
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