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Materials Department, University of California | 論文
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
- Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots ( Quantum Dot Structures)
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC