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MIRAI-ASRC, AIST | 論文
- Reliable Extractions of EOT and V_ in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances
- Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Nonlinear Al Concentration Dependence of the HfAlO_x/Si Conduction Band Offset Studied by Internal Photoemission Spectroscopy
- Poly-Si Comparable Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2
- Thermal Stability of a Thin HfO_2/Ultrathin SiO_2/Si Structure : Interfacial Si Oxidation and Silicidation
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+poly-Si/HfAlO_x/SiO_2 n-MOSFETs