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MIRAI-ASRC | 論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs
- High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate
- Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces
- Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+-Polysilicon/HfAlO_x/SiO_2 N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Experimental Evidence of Coexistence of Interface Traps Interacting with Majority and Minority Carriers in Ge MIS Structures
- Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs