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Lg Electronics Inc. Seoul Kor | 論文
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- Two-Stage Control for Container Cranes
- Growth Kinetics of Cu-Sn Intermetallic Compounds at Interface of 80Sn-20Pb Electrodeposits and Cu Based Leadframe Alloy, and Its Influence on the Fracture Resistance to 90°-Bending
- Robust Fuzzy Control of a Three Fin Torpedo
- (23) Robust Fuzzy Control of a Three Fin Torpedo
- Methods of Achieving Compatibility between High-Density Disk and Digital Versatile Disk Using a Bi-aspherical Singlet and a Wavefront Compensation Element
- A Nonlinearity Compensated Channel Model and Partial Response Maximum Likelihood(PRML) Simulator for the High Density Optical Disc
- The Effect of Al/Pt Interface Reaction on Lead-zirconate-titanate Capacitor and the Optimization of Via Contact for Double Metal Ferroelectric RAM
- An Optimized Via Contact Scheme of FeRAM for Double-Level Metallization and Beyond
- A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
- A Rewritable Optical Disk with a New Addressing Method for Increasing Recording Density and Random Accessibility