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LG Semicon.,Ltd. | 論文

• Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
• Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
• Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
• Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
• Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
• Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length

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