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Korea Advanced Inst. Sci. And Technol. Taejon Kor | 論文
- Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
- Surface Defect Inspection of Cold Rolled Strips with Features Based on Adaptive Wavelet Packets
- Power Mapping in a Canada Deuterium Uranium Reactor Using Kalman Filtering Technique
- Hermetically Sealed Inductor-Capacitor (LC) Resonator for Remote Pressure Monitoring
- Estimation of Direction of Arrival for Angle-Perturbed Sources
- Influence of La_Sr_CoO_3 Heterostructure Electrodes on Pb(Zr, Ti)O_3 Thin Film Properties
- Crystal Structure and B-Site Ordering in Antiferroelectric Pb(Mg_W_)O_3, Pb(Co_W_)O_3 and Pb(Yb_Nb_)O_3
- Influence of Oxygen Deficiency on Electrical Properties in the Superconductor (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Phase
- Negative Pattern Generation Technique by Laser Beam Writing for Integrated Optics
- Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
- Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
- Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films
- PMOS Thin-Film Transistors Fabricated in RTCVD Polycrystalline Silicon Germanium Films
- Quantum Interference Effects in an Aharonov-Bohm Ring with a Gate
- Oscillatory Behavior of Nonlocal Electrical Properties in Mesoscopic AlGaAs/GaAs Two-Dimensional Electron Gas Wire Structures
- Anomalous Magnetoresistance near Superconducting Transition Temperature in a Mesoscopic Aluminum Wire
- Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field-Effect Transistor
- A GaAs Junction-Gate FECFET(J-FECFET) for the Digital Integrated Circuits
- A High-Speed Si Bipolar Transistor with SAVEN : Self-Aligned device using VErtical Nitride
- A GaAs Floated Electron Channel Field Effect Transistor (FECFET) Fabricated by Selective Metal Organic Chemical Vapor Deposition