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Keimyung Univ. Daegu Kor | 論文
- Aluminum Chemical Vapor Deposition Technology for High Deposition Rate and Surface Morphology Improvement
- Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET
- Comprehensive Study of Plasma Pretreatment Process for Thin Gate Oxide (< 10 nm) Fabricated by Electron Cyclotron Resonance Plasma Oxidation
- A Simple and Efficient Pretreatment Technology for Selective Tungsten Deposition in Low-Pressure Chemical Vapor Deposition Reactor
- Activity Coefficients of Electrons and Holes in Degenerate Semiconductors with Nonuniform Composition
- Spatial and Temporal Variability of Satellite Primary Production in the Japan Sea from l998 to 2002