スポンサーリンク
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology | 論文
- Comparison of ferroelectric and insulating properties of Mn-doped BiFeO3 films formed on Pt, SrRuO3/Pt, and LaNiO3/Pt bottom electrodes by radio-frequency sputtering
- Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors with Metal Gate
- Proposal and Analysis of a Traveling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure
- Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
- Organic Field-Effect Transistors Based on π-Extended Dibenzotetrathiafulvalene Analogues with Thiophene Spacers
- New n-Type Field-effect Transistors Based on Pyrimidine-containing Compounds with (Trifluoromethyl)phenyl Groups
- Development of Organic Electronic Devices Using Boronate Esters and Related Heterocycles
- Preparation, Characterization, and Field-effect Transistor Performance of Benzo[1,2-d:4,5-d']bisthiazole Derivatives
- 植生評価に適したハイパースペクトル画像符号化法(画像・映像処理)
- 微粒子セルを用いた超音波位相共役波の発生とその応用
- 位相共役波の発生と応用
- Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors(Semiconductors)
- Structure Sensitivity of Platinum Catalysts for Decomposition Reaction of Diluted NO
- Fabrication of a Ferromagnetic-Coated Fiber Probe with a Double-Layer Structure(Special Issue on Near-Field Optics and Its Applications)
- Robust F_0 Estimation of Speech Signal Using Harmonicity Measure Based on Instantaneous Frequency(Speech and Hearing)
- Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET