スポンサーリンク
Institute of Semiconductors, Chinese Academy of Sciences | 論文
- Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Liquid Phase Epitaxy Growth and Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures
- Crystallographic and Magnetic Properties of R_3Fe_T_x and Their Nitrides, Carbides and Hydrides
- Recent Progresses of Si-Based Photonics in Chinese Main Land
- Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
- Excess Arsenic in GaAs Grown at Low Temperatures by Molecular Beam Epitaxy
- Growth and wood quality of sugi (Crytomeria japonica) planted in Akita prefecture (II). Juvenile/mature wood determination of aged trees
- A Novel Fast Lock-in PLL Frequency Synthesizer with Direct Frequency Presetting Circuit
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
- Child rotavirus infection in association with acute gastroenteritis in two Chinese sentinel hospitals
- Stability Improvement of Selective Oxidation During the Fabrication of InGaAs/GaAs Vertical Cavity Surface Emitting Laser
- A Novel Vision Chip for High-Speed Target Tracking
- Application of the Fourier analysis to determine the demarcation between juvenile and mature wood
- Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique
- Conduction Band Offset of InGaN/AllnGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique
- Indium Compositional Homogeneity in In_Al_N Epilayers Grown by Metal Organic Chemical Vapor Deposition
- Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier