Excess Arsenic in GaAs Grown at Low Temperatures by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-10-01
著者
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Lin Lanying
Institute Of Semiconductors Chinese Academy Of Sciences
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CHEN NuoFu
Institute of Semiconductors, Chinese Academy of Sciences
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WANG Yutian
Institute of Semiconductors, Chinese Academy of Sciences
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HE Hongjia
Institute of Semiconductors, Chinese Academy of Sciences
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He Hongjia
Institute Of Semiconductors Chinese Academy Of Sciences
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Chen Nuofu
Institute Of Semiconductors Chinese Academy Of Sciences
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Wang Yutian
Institute Of Semiconductors Chinese Academy Of Sciences
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WANG Yutian
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
関連論文
- Excess Arsenic in GaAs Grown at Low Temperatures by Molecular Beam Epitaxy
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing
- Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing