Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier
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概要
- 論文の詳細を見る
- 2013-05-25
著者
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Liu Xinyu
Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Liu Guoguo
Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Wang Cuimei
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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WEI Ke
Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences
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KONG Xin
Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences
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WANG Xiaoliang
Institute of Semiconductors, Chinese Academy of Sciences
関連論文
- Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier
- Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier