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Institute of Microelectronics, National Cheng Kung University | 論文
- Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
- Efficient Improvement on Device Performance for sub-90nm CMOSFETs
- An Efficient Mobility Enhancement Engineering on 65nm FUSI CMOSFETs using a Second CESL Process
- Systematic Analysis and Modeling of On-Chip Spiral Inductors for CMOS RFIC Application
- Mobility Modulation Technology Impact on Device Performance and Reliability for sub-90nm SOI CMOSFETs
- The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs
- Width Effect on Hot-Carrier-induced Degradation for 90nm Partially Depleted SOI CMOSFET
- The Impact of Pad Test-Fixture for De-embedding on Radio-Frequency MOSFETs
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- The Effect of Etch Stop Layer Stress on Negative Bias Temperature Instability of Deep Submicron p-MOSFETs
- Local Oxide Growth Mechanisms on Nickel Films
- Efficient Mobility Enhancement Engineering on 65 nm Fully Silicide Complementary Metal–Oxide–Semiconductor Field-Effect-Transistors Using Second Contect Etch Stop Layer Process
- Extra Bonus on Transistor Optimization with Stress Enhanced Notch-gate Technology for sub-90nm CMOSFET