スポンサーリンク
Institute of Materials Research and Engineering | 論文
- Tuning of Work Function of Er-germanide Metal Gates on High-K Dielectric
- Workfunction Adjustment Using Thin Metal Film (Ti, Pd) under FUSI Gate Electrode and Laser Annealing
- Excimer-Laser-Induced Oxidation of GaN Epilayer
- AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
- Blocking Impurities in Organic Light Emitting Device by Inserting Parylene Interlayer
- Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates