スポンサーリンク
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan | 論文
- Plasma amino acid profiles applied for diagnosis of advanced liver fibrosis in patients with chronic hepatitis C infection
- Surface Electronic Properties of Discontinuous Pd Films during Hydrogen Exposure
- Time Dependence of the Growth Morphology of GaN Single Crystals Prepared in a Na–Ga Melt
- Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN (Special Issue : Solid State Devices and Materials (2))
- Rutherford Backscattering Spectrometry of Electrically Charged Targets: Elegant Technique for Measuring Charge-State Distribution of Backscattered Ions
- Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Electrical Transport and Optical Properties of Hydrogen-Deficient YH2 Films
- Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon
- Electric Double Layer Transistor of Organic Semiconductor Crystals in a Four-Probe Configuration
- Terahertz Vibrational Modes of Crystalline Salicylic Acid by Numerical Model Using Periodic Density Functional Theory
- Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO ($0\leq x\leq 0.12$) Films on Zn-Polar ZnO Substrates
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Electronic Transition of Cobalt Monoxide under High-Pressure
- ZnO Channel Waveguides for Nonlinear Optical Applications
- Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co
- Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction
- On the Extended Point Defect Model in Si Crystals at High Temperature