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Institut fur Experimentelle Physik, Otto-von-Guericke Universitat | 論文
- Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
- Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
- Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 μm in Thickness
- X-ray Study of Step Induced Lateral Correlation Lengths in Thin AlGaN Nucleation Layers
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)