スポンサーリンク
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation | 論文
- Fluoride Glass Fiber for Infrared Transmission
- Synthesis of Compositionally Graded A15 Nb-Si Films by Co-Sputtering
- Tunneling Measurements on A15 Nb-Si Films
- Synthesis of A15Nb_3Ge by Pulsed Laser Annealing
- Bias Sputtering of Superconducting Nb_3Ge
- Reactive Synthesis of Niobium Nitride by Pulse Laser Annealing
- Reactive Synthesis of Niobium Nitride by Pulse Laser Annealing
- Reduction of Impurities in Fluoride Glass Optical Fiber
- Fabrication of Low OH and Low Loss Fluoride Optical Fiber
- Impurity Concentration Effects on Radiation Defect Introduction in InP Examined by in situ Measurement
- Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
- Deposition Properties of SiO_2-GeO_2 Particles in the Flame Hydrolysis Reaction for Optical Fiber Fabrication
- Properties of Nb_3Al Thin Films Sputter-Deposited on Sapphire Substrates
- Composition Deviation in Nb_3Al Thin Films Sputter-Deposited at High Substrate Temperatures
- AES Analysis of Nb_3Al Thin Films Sputter-Deposited on Oxidized Silicon Substrates
- Semiconductor Materials for 2〜4μm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers : SOLID SOLUTIONS
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- Optical Time Domain Reflectometer with a Laser Diode Operating as Light Emitter/Photodetector
- The Stability of Plasma-Polymerized Carbon Disulfide Films Containing Tellurium for Laser Recording