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Huls Japan Limited, MEMC Division | 論文
- Role of Silicon Self-Interstitials Injected by Thermal Oxidation in Oxygen Precipitation in Czochralski Silicon
- Asymmetric Distribution of Oxygen Precipitates in Czochralski Silicon Wafers Covered on the Backside with Polycrystalline Silicon Films
- Superior Gettering Capability of Polycrystalline-Silicon Back-Sealed Silicon Wafers
- Coexistence of Two Types of Nucleation Sites for Oxygen Precipitates in Czochralski Silicon