Coexistence of Two Types of Nucleation Sites for Oxygen Precipitates in Czochralski Silicon

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概要

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• We have found that the nuclei effective for annealing at 800℃ are dominantly generated at two characteristic temperatures of 500℃ and 650℃. Carbon-related oxygen aggregates, whose density increases with increasing carbon concentration, are generated at temperatures around 500℃. Thermal-donor-related oxygen aggregates which thermal donors grow into are additionally created at temperatures around 500℃. In low-carbon-content silicon, thermal-donor-related oxygen aggregates are dominantly created at 500℃. Another type of carbon-related oxygen aggregate is generated at temperatures around 650℃. The rapid nucleation in high-carbon-content silicon during annealing at 500℃ for only 30 min is resonably explained by considering that carbon-related oxygen aggregates formed at about 500℃ are composed of C_i-O_2 complexes.

• 社団法人応用物理学会の論文
• 1992-08-15

著者

• YAMANAKA Hideki

  Huls Japan Limited, MEMC Division

• Yamanaka Hideki

  Huls Japan Limited Memc Division

関連論文

• Role of Silicon Self-Interstitials Injected by Thermal Oxidation in Oxygen Precipitation in Czochralski Silicon
• Asymmetric Distribution of Oxygen Precipitates in Czochralski Silicon Wafers Covered on the Backside with Polycrystalline Silicon Films
• Superior Gettering Capability of Polycrystalline-Silicon Back-Sealed Silicon Wafers
• Coexistence of Two Types of Nucleation Sites for Oxygen Precipitates in Czochralski Silicon

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