Superior Gettering Capability of Polycrystalline-Silicon Back-Sealed Silicon Wafers

概要

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Polycrystalline-silicon back-sealed (PBS) wafers preserve high gettering efficiency as long as the back polysilicon film remains even after exhaustion of the film through repeated oxidation. After complete consumption of the film, the high gettering efficiency decreases to some extent, but is still maintained by many oxidation-induced stacking faults and dislocations formed at the interface between the film and the silicon lattice during oxidation. All the Ni atoms and almost all the Cu atoms on the intentionally contaminated wafer surface are trapped in the back polysilicon film regardless of the density of oxygen precipitates.
社団法人応用物理学会の論文
1993-05-15