Asymmetric Distribution of Oxygen Precipitates in Czochralski Silicon Wafers Covered on the Backside with Polycrystalline Silicon Films

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概要

• 論文の詳細を見る

• Preannealing in an oxidizing atmosphere only for 10 min and the existence of backside-polycrystalline silicon films during this preannealing are necessary and sufficient to form an asymmetric distribution of oxygen precipitates in the wafer interior. More silicon self-interstitials due to the oxidation migrate into a water interior from a front surface than from a back surface, because the backside film prevents silicon self-interstitials from migrating into the wafer interior. Correspondingly, more precipitation nuclei shrink near the front surface than near the back surface.

• 社団法人応用物理学会の論文
• 1991-04-15

著者

• Yamanaka Hideki

  Huls Japan Limited Memc Division

• Aoki Yoshihisa

  Huls Japan Limited, MEMC Division

• Aoki Yoshihisa

  Huls Japan Limited Memc Division

関連論文

• Role of Silicon Self-Interstitials Injected by Thermal Oxidation in Oxygen Precipitation in Czochralski Silicon
• Asymmetric Distribution of Oxygen Precipitates in Czochralski Silicon Wafers Covered on the Backside with Polycrystalline Silicon Films
• Superior Gettering Capability of Polycrystalline-Silicon Back-Sealed Silicon Wafers
• Coexistence of Two Types of Nucleation Sites for Oxygen Precipitates in Czochralski Silicon

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