Role of Silicon Self-Interstitials Injected by Thermal Oxidation in Oxygen Precipitation in Czochralski Silicon

概要

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The retardation of oxygen precipitation due to silicon self-interstitials has been investigated by varying the growth rate of a silicon oxide film and the carbon concentration of the silicon wafers. This retardation was found to relate to the decrease in the number density of oxygen precipitates near the oxidized wafer surface. This can be understood by considering that the critical radius of oxygen precipitation nuclei varies depending on the depth from the wafer surface in the early stage of the heat treatment. Moreover, the reduction of the precipitated oxygen concentration was found to significantly increase with slightly increasing carbon content. This carbon effect may be explained by assuming that a larger number of smaller precipitation nuclei would exist in the high-carbon wafers than in the low-carbon ones after the low temperature annealing.
社団法人応用物理学会の論文
1990-11-20