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Hitachi Device Development Center | 論文
- Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO_2 after Gate Etching
- In-situ After-treatment Using Low-energy Dry-etching with a CF4/O2 Gas Mixture to Remove Reactive Ion Etching Damage
- Using Auger Electron Spectroscopy for Chemical Analysis of Plasma Damage Induced by Reactive Ion Etching of SiO_2
- Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO_2 Dry-Etching Process