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Hitachi Central Research Laboratory | 論文
- A New Phase Appearing in Metal-Semiconductor Transition in VO_2
- Ground State Energies of Donors in Ge and Si
- Energy Spectrum of Mn^ Ion in Calcium Fluorophosphate II
- Microwave Attenuation by Cyclotron Resonance in a Slightly Ionized Gas
- Heating of a Plasma by Acoustic Waves
- Spectrum of the Electron Cyelotron Resonance in a Plasma
- Measurements on Collision Frequencies of Electrons in Neon Gas
- Energy Spectrum of Mn++ Ion in Calcium Fluorophosphate I
- Uniaxial Stress Effect on Germanium-Silicon Alloyed Heterojunction
- Depolarization Effects in 45° Z Cut KDP Modulators
- Transverse Magneto-Conductivity of a Two-Dimensional Electron Gas
- Relaxation Phenomenon in Magnetic Films with Stripe Domains
- An Estimation of Perpendicular Anisotropy of Magnetic Thin Films Originationg from Non-Magnetic Grain Boundaries
- Comparison of Photoconductive Response Times of InGaAs/InAlAs and InGaAs/InGaAsP Multi-Quantum Well Waveguide Modulators
- Impurity Conduction in Compensated P-Germanium at Large Strain Limit
- Large Strain Dependence of the Impurity Breakdown in Compensated P-Type Germanium
- A New Type of Oscillations in Germanium under the Magnetic Field
- Change of Surface state of Ge by Electron Bomberdment
- Measurement of the Lifetime of Minority Carriers in Semiconductors with a Scanning Electron Microscope
- Paramagnetic Centers Produced at the Silicon Surface by Heat-Treatment in Atmosphere Containing No Oxygen