Paramagnetic Centers Produced at the Silicon Surface by Heat-Treatment in Atmosphere Containing No Oxygen

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1962-10-05

著者

• Shoji Masakazu

  Hitachi Central Re8earch Laboratory

• KUSUMOTO Hazime

  Hitachi Central Research Laboratory

関連論文

• A New Phase Appearing in Metal-Semiconductor Transition in VO_2
• Observation of Dislocations in Germanium Single Crystal
• Paramagnetic Centers Produced at the Silicon Surface by Heat-Treatment in Atmosphere Containing No Oxygen
• On the Impurity Concentration of the P-type Recrystallized Layer of Tunnel Diode
• Determination of the Impurity Concentration of the P-type Recrystallized Layer by Thermoelectric Power Measurements

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