Comparison of Photoconductive Response Times of InGaAs/InAlAs and InGaAs/InGaAsP Multi-Quantum Well Waveguide Modulators

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概要

• 論文の詳細を見る

• We compare the pulsed photoconductive response of InGaAs/InAlAs and InGaAs/InGaAsP multiple quantum well waveguide modulators as a function of bias voltage. The InGaAsP device exhibits a substantially faster pulsed photoresponse for fields between 20 and 200 kV/cm and attains its optimum performance (minimum pulse width, maximum internal efficiency) for very low applied fields (30 kV/cm), while the InAlAs device does so only for very large fields of >200 kV/am. While the electron and hole sweep-out times are within a factor of 3 of each other in both samples, we argue that the reduction in response time for the InGaAsP device arises mainly from a reduction in electron sweep-out times.

• 社団法人応用物理学会の論文
• 1994-03-01

著者

• Moss David

  Hitachi Central Research Laboratory

• Aoki Masahiro

  Hitachi Central Research Laboratory

• SANO Hirohisa

  Hitachi Central Research Laboratory

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• Comparison of Photoconductive Response Times of InGaAs/InAlAs and InGaAs/InGaAsP Multi-Quantum Well Waveguide Modulators

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