Impurity Conduction in Compensated P-Germanium at Large Strain Limit

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概要

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• The strain dependence of impurity conductivity has been measured in compensated p-type germanium containing 5×10^<15> to 1.2×10^<16> impurity atoms/c.c. using large uniaxial compression. For both <100> and <111> compression the ground state orbital of acceptor was found to have an ellipsoidal envelope along the stress direction and was enlarged. Impurity resistivity decreases linearly in a log-log plot of the resistivity versus the inverse strain when the stress is large enough to split off the degenerated valence bands. The decrease of resistivity shows a large difference between the cases of <100> and <111> stress, whereas the difference by the impurity concentration is small. Some clues for the mechanism of impurity conduction in the intermediate impurity concentration region may be found in this experiment.

• 社団法人日本物理学会の論文
• 1965-10-05

著者

• Takasugi Noboru

  Hitachi Central Research Laboratory

• Komatsubara Kiichi

  Hitachi Central Research Laboratory

関連論文

• Transverse Magneto-Conductivity of a Two-Dimensional Electron Gas
• Impurity Conduction in Compensated P-Germanium at Large Strain Limit
• Large Strain Dependence of the Impurity Breakdown in Compensated P-Type Germanium
• A New Type of Oscillations in Germanium under the Magnetic Field
• Change of Surface state of Ge by Electron Bomberdment

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