Large Strain Dependence of the Impurity Breakdown in Compensated P-Type Germanium

スポンサーリンク

概要

• 論文の詳細を見る

• To investigate the negative resistance mechanism of low' temperature impurity breakdown in compensated P-type germanium, the variation of the critical field, E_c, and of the sustaining field, E_s, under strong uniaxial compressive stresses was studied. The ratio E_c/E_s in compensated samples was between 3 and 5 when no strain was produced. However, the ratio decreased with the stress down to values between 1.5 and 2 when a large strain was produced. The changes of E_c and of E_s as a function of the acceptor ionization energy, ε_1, were found to be E_c∝(ε_1)^<3/4> and E_s∝(ε_1)^<5/4>, respectively, at large strain region. It was suggested that the energy loss mechanism by emission of the optical phonon may be responsible for the negative resistance of Cryosar phenomena.

• 社団法人日本物理学会の論文
• 1965-08-05

著者

• Kurono Hirokazu

  Hitachi Central Research Laboratory

• Takasugi Noboru

  Hitachi Central Research Laboratory

• Komatsubara Kiichi

  Hitachi Central Research Laboratory

• Komatsubara K.

  Hitachi Central Research Laboratory

関連論文

• Transverse Magneto-Conductivity of a Two-Dimensional Electron Gas
• Impurity Conduction in Compensated P-Germanium at Large Strain Limit
• Large Strain Dependence of the Impurity Breakdown in Compensated P-Type Germanium
• A New Type of Oscillations in Germanium under the Magnetic Field
• Change of Surface state of Ge by Electron Bomberdment
• The Effect of Magnetic Field on the Low-Temperature Breakdown in Highly Compensated Germanium

スポンサーリンク