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High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation | 論文
- The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
- Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers(Special Issue on Microwave and Millimeter Wave Technology)
- High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones (Special Issue on Microwave and Millimeterwave High-power Devices)
- Automated Millimeter-Wave On-Wafer Testing System (Special Issue on Microwave and Millimeter Wave Technology)
- A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module(Microwaves, Millimeter-Waves)
- Large Signal Evaluation of Nonlinear HBT Model